2SC6060 - Transistor Silicon NPN Transistor

Toshiba

Datasheet Details

Part number	2SC6060
Manufacturer	Toshiba
File Size	193.33 KB
Description	Transistor Silicon NPN Transistor
Datasheet	2SC6060 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC606	NPN SILICON TRANSISTOR	ETC
2SC606	PNP/NPN SILICON EPITAXIAL TRANSISTOR	ETC
2SC6064	NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SC6065	NPN Triple Diffused Planar Silicon Transistor	Sanyo Semicon Device
2SC6000	Silicon NPN Transistor	Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number	Description
2SC6061	Silicon NPN Transistor
2SC6067	Silicon NPN Transistor
2SC6010	Silicon NPN Transistor
2SC6026CT	Silicon NPN Transistor
2SC6072	Multi-chip Device Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Power Amplifier Applications Driver Stage Amplifier Applications High-transition frequency: fT = 100 MHz (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 230 230 5 1.0 2.0 100 2 20 150 −55 to 150 Unit V V V A A mA W W °C °C 1: BASE 2: COLLECTOR 3: EMITTER JEDEC JEITA TOSHIBA ― SC-67 2-10U1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g.