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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC6067
○ Medium Power Amplifier Applications ○ Strobe Flash Applications
2SC6067
Unit: mm
Low Saturation Voltage:
VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA）
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
DC Pulsed
Collector power dissipation
Junction temperature
VCBO VCEO VEBO
IC ICP PC (Note1) Tj
15 10 6 5 9 550 150
V V V
A
mW °C
1. Emitter
2. Collector Mini 3. Base
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note 1: When a device is mounted on a glass epoxy board (35 mm × 30 mm × 1mm)
Note: Using continuously under heavy loads (e.g.
2SC6067 Datasheet
