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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6061
2SC6061
High-Speed Switching Applications DC-DC Converter Applications
High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation: VCE (sat) = 0.14 V (max)
High-speed switching: tf = 0.2 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
2.9±0.2 1.9±0.2 0.95 0.95
+0.2 2.8-0.3
+0.2 1.6-0.1
Unit: mm
0.4±0.1
1
2
3
0.16±0.05
0.15
0.7±0.05
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (Note 1)
DC Pulse
Base current
Collector power dissipation (Note 2)
t = 10s DC
Junction temperature
Storage temperature range
VCBO VCEX VCEO VEBO
IC ICP IB
PC
Tj Tstg
180
V
150
V
120
V
7
V
1.0
A
2.
2SC6061 Datasheet
