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SILICON NPN TRIPLE DIFFUSED TYPE
(DARLINGTON POWER)
_
HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : h FE=2000 (Min. )
(V CE=3V, I C=5A)
• Low Saturation Voltage : VCE (sat)=l- 5v dc=5A)
• Monolithic Construction With Built-in Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
BASE
SYMBOL VcBO VCEO VEBO
IB
?C
L stg
RATING 80
80
UNIT V
15 0.2
100 150 -65^150 -COLLECTOR
L BASE 2. EMITTER
COLLECTOR (CASE)
JEDEC
TO
EIAJ
TB — 3
TOSHIBA
21 A 1 A
Mounting Kit No. AC73
Weight : 12.
2SD524 Datasheet
