Datasheet Summary
SILICON NPN TRIPLE DIFFUSED TYPE
(DARLINGTON POWER)
_
HIGH POWER SWITCHING APPLICATIONS.
Features
- High DC Current Gain : h FE=2000 (Min. )
(V CE=3V, I C=5A)
- Low Saturation Voltage : VCE (sat)=l- 5v <Max -> dc=5A)
- Monolithic Construction With Built-in Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
BASE
SYMBOL VcBO VCEO VEBO
?C
L stg
RATING 80
UNIT V
15 0.2
100 150 -65^150 -COLLECTOR
L BASE 2. EMITTER
COLLECTOR...