• Part: 2SD549
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 112.62 KB
Download 2SD549 Datasheet PDF
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Datasheet Summary

t : SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER) PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. 7.9MAX. Unit in mm POWER AMPLIFIER APPLICATIONS. Features - High DC Current Gain : hFE=4000(Min.) (VCE=2V, I c=150mA) - Low Saturation Voltage : V CE(sat)=1.5V(Max.) (I C=1A, I B=lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emi t er-Base Voltage v EBO Continuous Collector Current ic Collector Power Dissipation PC (Ta=25°C) Junction Temperature UNIT Storage Temperature Range L stg -55M.50 EQUIVALENT CIRCUIT BASE <: ..COLLECTOR...