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2SK12 - Silicon N-Channel Transistor

Download the 2SK12 datasheet PDF. This datasheet also covers the 2SK11 variant, as both devices belong to the same silicon n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Gate Leakage Current : I GSS =-1.0nA (Max. ) (2SK11) : I GSS =-0.1nA (Max. ) (2SK12, 2SK15).
  • High Gain : l>'fsl=700 ^ 3200 US (2SK11) : |yfsl =800 % 3200 yS (2SK12, 2SK15).
  • Low Noise NF=3dB (Max. ) at f=lkHz, R g=lMfi (2SK12) NF=3dB (Max. ) at f =lkHz , Rg=10kfi (2SK15) NF=10dB (Max. ) at f=120Hz, Rg=10kft (2SK15) Well Matched Pairs are Available. (Refer to page 3) Unit in mm 1. SOURCE 2. GATE 3. DRAIN 4. SHIELD TO-17 TC-4 , TB-6C Weight : 0.30g.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK11-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK12
Manufacturer Toshiba
File Size 394.89 KB
Description Silicon N-Channel Transistor
Datasheet download datasheet 2SK12 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) 2SK11 2SK12 2SK15 LOW FREQUENCY AMPLIFIER, HIGH INPUT IMPEDANCE CIRCUIT, CHOPPER AMPLIFIER, DIFFERENTIAL AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS. LOW NOISE AMPLIFIER APPLICATIONS (2SK15). FEATURES • Low Gate Leakage Current : I GSS =-1.0nA (Max.) (2SK11) : I GSS =-0.1nA (Max.) (2SK12, 2SK15) • High Gain : l>'fsl=700 ^ 3200 US (2SK11) : |yfsl =800 % 3200 yS (2SK12, 2SK15) • Low Noise NF=3dB (Max.) at f=lkHz, R g=lMfi (2SK12) NF=3dB (Max.) at f =lkHz , Rg=10kfi (2SK15) NF=10dB (Max.) at f=120Hz, Rg=10kft (2SK15) Well Matched Pairs are Available. (Refer to page 3) Unit in mm 1. SOURCE 2. GATE 3. DRAIN 4. SHIELD TO-17 TC-4 , TB-6C Weight : 0.