30J101
30J101 is Silicon N-Channel IGBT manufactured by Toshiba.
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J101
High Power Switching Applications
GT30J101
Unit: mmç
- The 3rd Generation
- Enhancement-Mode
- High Speed: tf = 0.30 µs (max)
- Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)ç
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES VGES
IC ICP
Tj Tstg
Rating
Unit
±20
30 A
°C
-...
