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Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J101
High Power Switching Applications
GT30J101
Unit: mmç
• The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)ç
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES VGES
IC ICP
PC
Tj Tstg
Rating
Unit
600
V
±20
V
30 A
60
155
W
150
°C
−55~150
°C
JEDEC JEITA TOSHIBA Weight: 4.
30J101 Datasheet
