30J101 Description
Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage:.
- Part: 30J101
- Manufacturer: Toshiba
- Size: 291.77 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 30J121 | Silicon N-Channel IGBT |
| 30J122 | Silicon N-Channel IGBT |
| 30J122A | Silicon N-Channel IGBT |
| 30J126 | Silicon N-Channel IGBT |
| 30J301 | Silicon N-Channel IGBT |