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30J101 - Silicon N-Channel IGBT

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Datasheet Details

Part number 30J101
Manufacturer Toshiba
File Size 291.77 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet 30J101 Datasheet
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Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C)ç Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCES VGES IC ICP PC Tj Tstg Rating Unit 600 V ±20 V 30 A 60 155 W 150 °C −55~150 °C JEDEC JEITA TOSHIBA Weight: 4.
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