30J301
30J301 is Silicon N-Channel IGBT manufactured by Toshiba.
GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm l The 3rd Generation l Enhancement- Mode l High Speed
: tf = 0.30µs (Max.) l Low Saturation Voltage : VCE (sat) = 2.7V (Max.) l FRD included between Emitter and Collector
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector- Emitter Voltage
Gate- Emitter Voltage
DC Collector Current
1ms
Emitter- Collector Forward
Current
1ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
VCES VGES
IC ICP IF IFM
Tj Tstg
RATING
600 ±20 30 60 30 60
- 55~150
EQUIVALENT...
