30J311 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	30J311
Manufacturer	Toshiba
File Size	480.95 KB
Description	Silicon N-Channel IGBT
Datasheet	30J311 Datasheet
Additional preview pages of the 30J311 datasheet.

📁 Similar Datasheet

30J324 - Transistor Silicon N-Channel IGBT (Toshiba Semiconductor)
30J127 - 600V 200A IGBT MOSFET (ETC)
30JL2C41 - HIGH EFFICIENCY DIODE STACK (Toshiba Semiconductor)

Other Datasheets by Toshiba

30J301 - Silicon N-Channel IGBT
30J322 - Silicon N-Channel IGBT
30J101 - Silicon N-Channel IGBT
30J121 - Silicon N-Channel IGBT
30J122 - Silicon N-Channel IGBT
30J122A - Silicon N-Channel IGBT
30J126 - Silicon N-Channel IGBT

Full PDF Text Transcription

Click to expand full text

GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage DC Collector Current 1ms Emitter−Collector Forward DC Current 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 30 60 30 60 145 150 −55~150 EQUIVALENT CIRCUIT UNIT V V A A A A W °C °C JEDEC JEITA TOSHIBA Weight: 3.

Published: Dec 19, 2020 |