30J322 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	30J322
Manufacturer	Toshiba
File Size	422.05 KB
Description	Silicon N-Channel IGBT
Datasheet	30J322 Datasheet
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Full PDF Text Transcription

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GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage DC Collector Current 1ms Emitter−Collector Forward DC Current 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range VCES VGES IC ICP IF IFP PC Tj Tstg 600 V ±20 V 30 A 100 30 A 60 75 W 150 °C −55 to 150 °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-16F1A Weight: 5.8 g (typ.

Published: Dec 19, 2020 |