30J322 datasheet by Toshiba.
| Part number | 30J322 |
|---|---|
| Datasheet | 30J322-Toshiba.pdf |
| File Size | 422.05 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) RATINGS (Ta = 25°C) Unit:.
| Part Number | Description |
|---|---|
| 30J301 | Silicon N-Channel IGBT |
| 30J311 | Silicon N-Channel IGBT |
| 30J101 | Silicon N-Channel IGBT |
| 30J121 | Silicon N-Channel IGBT |
| 30J122 | Silicon N-Channel IGBT |
| 30J122A | Silicon N-Channel IGBT |
| 30J126 | Silicon N-Channel IGBT |
