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GT30J322
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J322
FOURTH-GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
z FRD included between emitter and collector
z Enhancement mode type
z High speed
: tf = 0.25μs (Typ.) (IC = 50A)
z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Unit: mm
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
DC Collector Current
1ms
Emitter−Collector Forward
DC
Current
1ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
VCES VGES
IC ICP IF IFP
PC
Tj Tstg
600
V
±20
V
30 A
100
30 A
60
75
W
150
°C
−55 to 150
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.
30J322 Datasheet
