Datasheet Summary
.. TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
Fourth-generation IGBT Current Resonance Inverter Switching Applications z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A) FRD included between emitter and collector Toshiba package name: TO-3P(N)IS Unit:...