Datasheet4U.com

MG200H1AL1 - DARLINGTON POWER MODULE

Product Overview

Toshiba

📥 Download Datasheet

MG200H1AL1 DARLINGTON POWER MODULE by Toshiba - Datasheet Preview — Datasheet preview – MG200H1AL1

Datasheet Details

Part number	MG200H1AL1
Manufacturer	Toshiba
File Size	151.17 KB
Description	DARLINGTON POWER MODULE
Datasheet	MG200H1AL1 Datasheet
Additional preview pages of the MG200H1AL1 datasheet.

Product details

Features

. The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hFE=80(Min. ) (I C=200A) . Low Saturation Voltage: VCE ( sat )=2V(Max. ) (Ic=200A) . High Speed : tf =4/.

📁 Similar Datasheet

MG200H1AL2 - IGBT (Toshiba Semiconductor)
MG200H1FL1A - IGBT (Toshiba Semiconductor)
MG200 - Metal Glaze Resistors (HITANO)
MG200F6ES61 - Compact IGBT Series Module (Powerex Power Semiconductors)
MG200J6ES61 - Compact IGBT Series Module (Powerex Power Semiconductors)
MG200M1UK1 - NPN (ETC)
MG200Q1UK1 - NPN (ETC)
MG200Q2YS60A - High Power Switching Applications Motor Control Applications (Toshiba Semiconductor)

Other Datasheets by Toshiba

MG200J2YS50 - Silicon N Channel IGBT GTR Module
MG200Q1JS40 - Silicon N Channel IGBT GTR Module
MG200Q1US41 - Silicon N Channel IGBT GTR Module
MG200Q1US51 - Silicon N Channel IGBT GTR Module
MG200Q1ZS11 - Silicon N Channel IGBT GTR Module
MG200Q1ZS40 - Silicon N Channel IGBT GTR Module

Published: Jul 16, 2018 |