MG200Q1JS40
MG200Q1JS40 is Silicon N Channel IGBT GTR Module manufactured by Toshiba.
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Chopper Applications
Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage
: VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit
JEDEC JEITA TOSHIBA Weight: 430g
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
VR IC ICP IF IFM PC Tj Tstg
VIsol
―
Rating
1200 ±20 1200 200 400 200 400 1300 150
- 40 ~ 125 2500 (AC 1 min.) 3/3
Unit V V V
W °C °C V N- m
― ― 2-109C3A
1 2001-08-16
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage
Input capacitance
Switching time
Reverse current Forward...
