MG200Q1ZS40
MG200Q1ZS40 is Silicon N Channel IGBT GTR Module manufactured by Toshiba.
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage
: VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case
Equivalent Circuit
JEDEC JEITA TOSHIBA Weight: 430g
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
VR IC ICP IF IFM
Tj Tstg
VIsol
―
Rating
1200 ±20 1200 200 400 200 400
- 40 ~ 125
2500 (AC 1 min.)
3/3
Unit V V V A
W °C °C V N- m
― ― 2-109C2A
1 2001-08-16
Electrical Characteristics (Ta =...
