MG200Q1ZS11
MG200Q1ZS11 is Silicon N Channel IGBT GTR Module manufactured by Toshiba.
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm
High input impedance High speed : tf = 1.0µs (Max.) trr = 0.5µs (Max.) Low saturation voltage
: VCE (sat) = 2.7V (Max.) Enhancement-mode The electrodes are isolated from case
Equivalent Circuit
JEDEC EIAJ TOSHIBA Weight: 445g
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg VIsol ―
Rating
1200 ±20 200 400 200 400 1400 150
- 40 ~ 125 2500 (AC 1 min.) 3/3
Unit V V
W °C °C V N- m
― ― 2-109B5A
1 2001-05-11
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Collector cut-off current
Collector-emitter...
