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MG200Q1ZS11 - Silicon N Channel IGBT GTR Module

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Part number MG200Q1ZS11
Manufacturer Toshiba
File Size 410.76 KB
Description Silicon N Channel IGBT GTR Module
Datasheet download datasheet MG200Q1ZS11 Datasheet
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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 445g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 200 400 200 400 1400 150 −40 ~ 125 2500 (AC 1 min.
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