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MG200Q2YS40 - Silicon N Channel IGBT GTR Module

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Part number MG200Q2YS40
Manufacturer Toshiba
File Size 195.77 KB
Description Silicon N Channel IGBT GTR Module
Datasheet download datasheet MG200Q2YS40 Datasheet
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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 200 400 200 400 1300 150 −40 ~ 125 2500 (AC 1 min.
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