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TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q2YS40
MG200Q2YS40
High Power Switching Applications Motor Control Applications
Unit: mm
l High input impedance l High speed : tf = 0.5µs (max)
trr = 0.5µs (max) l Low saturation voltage
: VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case
Equivalent Circuit
JEDEC JEITA TOSHIBA Weight: 430g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP IF IFM
PC
Tj Tstg
VIsol
―
Rating
1200 ±20 200 400 200 400
1300
150 −40 ~ 125
2500 (AC 1 min.
MG200Q2YS40 Datasheet
