MG200Q1US41
MG200Q1US41 is Silicon N Channel IGBT GTR Module manufactured by Toshiba.
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage
: VCE (sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal : M4/M6 / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg VIsol ―
JEDEC EIAJ TOSHIBA Weight: 465g
― ― 2-109A4A
Rating
1200 ±20 200 400 200 400 1400 150
- 40 ~ 125 2500 (AC, 1 min.) 2/3/3
Unit V V
W °C °C V N- m
1 2001-04-16
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching...
