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MG200Q1US41 - Silicon N Channel IGBT GTR Module

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Part number MG200Q1US41
Manufacturer Toshiba
File Size 195.68 KB
Description Silicon N Channel IGBT GTR Module
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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage : VCE (sat) = 4.0V (Max.) l Enhancement-mode l The electrodes are isolated from case.
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