• Part: MG200Q1US41
  • Manufacturer: Toshiba
  • Size: 195.68 KB
Download MG200Q1US41 Datasheet PDF
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MG200Q1US41 Description

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.) l Low saturation voltage.

MG200Q1US41 Key Features

  • High input impedance
  • High speed : tf = 0.5µs (Max.) trr = 0.5µs (Max.)
  • Low saturation voltage : VCE (sat) = 4.0V (Max.)
  • Enhancement-mode
  • The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collec