MG200Q1US51 Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive load l Low saturation voltage.
MG200Q1US51 Key Features
- High input impedance
- High speed : tf = 0.3µs (Max.) @Inductive load
- Low saturation voltage : VCE (sat) = 3.6V (Max.)
- Enhancement-mode
- The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Wei