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MG200Q1US51 - Silicon N Channel IGBT GTR Module

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Part number MG200Q1US51
Manufacturer Toshiba
File Size 251.77 KB
Description Silicon N Channel IGBT GTR Module
Datasheet download datasheet MG200Q1US51 Datasheet
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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l The electrodes are isolated from case.
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