MG200Q1US51 Datasheet | Toshiba

TOSHIBA GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 465g Characteristic Symbol Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward Current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range VCES VGES IC (25°C / 80°C) ICP (25°C / 80°C) IF IFM PC Tj Tstg Isolation voltage VIsol Screw torque (Terminal : M4/M6/mounting) ― Rating 1200 ±20 300 / 200 600 / 400 200 400 1500 150 - 40 ~ 125 2500 (AC 1 min.) 2/3/3 Unit V V A W °C °C V N- m ― ― 2-109F1A 000707EAA2 - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to ply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. 2001-02-22 1/6 Electrical Characteristics (Ta =...