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TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q1US51
MG200Q1US51
High Power Switching Applications Motor Control Applications
Unit: mm
l High input impedance l High speed : tf = 0.3µs (Max.)
@Inductive load l Low saturation voltage
: VCE (sat) = 3.6V (Max.) l Enhancement-mode l The electrodes are isolated from case.
MG200Q1US51 Datasheet
