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MG200Q2YS50 - Silicon N Channel IGBT GTR Module

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Part number MG200Q2YS50
Manufacturer Toshiba
File Size 251.24 KB
Description Silicon N Channel IGBT GTR Module
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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l Includes a complate half bridge in one ackage. l The electrodes are isolated from case.
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