MG200Q2YS50
MG200Q2YS50 is Silicon N Channel IGBT GTR Module manufactured by Toshiba.
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.)
@Inductive Load l Low saturation voltage
: VCE (sat) = 3.6V (Max.) l Enhancement-mode l Includes a plate half bridge in one ackage. l The electrodes are isolated from case.
Equivalent Circuit
JEDEC EIAJ TOSHIBA Weight: 430g
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC (25°C / 80°C)
ICP (25°C / 80°C)
IF IFM
Tj Tstg
VIsol
―
Rating
1200 ±20
300/200
600/400
200 400
- 40 ~ 125
2500 (AC 1 min.)
3/3
Unit V...
