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MG200Q2YS50 Datasheet

Manufacturer: Toshiba
MG200Q2YS50 datasheet preview

Datasheet Details

Part number MG200Q2YS50
Datasheet MG200Q2YS50_ToshibaSemiconductor.pdf
File Size 251.24 KB
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
MG200Q2YS50 page 2 MG200Q2YS50 page 3

MG200Q2YS50 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive Load l Low saturation voltage.

MG200Q2YS50 Key Features

  • High input impedance
  • High speed : tf = 0.3µs (Max.) @Inductive Load
  • Low saturation voltage : VCE (sat) = 3.6V (Max.)
  • Enhancement-mode
  • Includes a plate half bridge in one ackage
  • The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 430g Maximum Ratings (T
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