MG200J2YS50 Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a plete half bridge in one package.
MG200J2YS50 Key Features
- The electrodes are isolated from case
- High input impedance
- Includes a plete half bridge in one package
- Enhancement-mode
- High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A)
- Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Equivalent Circuit JEDEC EIAJ TOSHIBA ― ― 2-95A