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MG200J2YS50 - Silicon N Channel IGBT GTR Module

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Datasheet Details

Part number MG200J2YS50
Manufacturer Toshiba
File Size 221.70 KB
Description Silicon N Channel IGBT GTR Module
Datasheet download datasheet MG200J2YS50 Datasheet

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TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) l Low saturation voltage : VCE (sat) = 2.