MG200J2YS50 - Silicon N Channel IGBT GTR Module

Toshiba

Datasheet Details

Part number	MG200J2YS50
Manufacturer	Toshiba
File Size	221.70 KB
Description	Silicon N Channel IGBT GTR Module
Datasheet	MG200J2YS50 Datasheet
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Full PDF Text Transcription

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TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) l Low saturation voltage : VCE (sat) = 2.

Published: Apr 29, 2005 |