SSM3K62TU
SSM3K62TU is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance
: RDS(ON) = 43 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 50 mΩ (typ.) (@VGS = 2.5 V) RDS(ON) = 60 mΩ (typ.) (@VGS = 1.8 V) RDS(ON) = 70 mΩ (typ.) (@VGS = 1.5 V) RDS(ON) = 98 mΩ (typ.) (@VGS = 1.2 V)
3. Packaging and Pin Assignment
1: Gate 2: Source 3: Drain
4. Orderable part number
Orderable part number
AEC-Q101
Note
SSM3K62TU,LF SSM3K62TU,LXGF SSM3K62TU,LXHF
- YES YES
(Note 1)
General Use Unintended Use Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
©2016-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-08
2021-05-28 Rev.4.0
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
VGSS
±8
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1), (Note 2)
Power...