SSM6N951L Datasheet | Toshiba

Features (1) Low source-source on-resistance : RSS(ON) = 4.4 mΩ (typ.) (@VGS = 4.5 V) (2) Ro HS patible (Note 1) (3) Halogen-free Note 1: The Ro HS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Packaging and Pin Assignment TCSP6A-172101 ©2019-2023 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2020-08 2023-10-10 Rev.5.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Source-source voltage Gate-source voltage VSSS VGSS ±8 Source current (DC) Source current (pulsed) (t ≤ 10 µs) (Note 1) Power dissipation Power dissipation (Note 2) (t ≤ 10 s) (Note 2) Channel temperature Storage temperature Tch - Tstg -55 to 150 - Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate,...