| Part number | TC58NVG1S3EBAI4 |
|---|---|
| Datasheet | TC58NVG1S3EBAI4-Toshiba.pdf |
| File Size | 839.35 KB |
| Manufacturer | Toshiba |
| Description | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
|
|
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58NVG1S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
| Part Number | Description |
|---|---|
| TC58NVG1S3ETA00 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG1S3ETAI0 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
| TC58NVG1S3BFT00 | 2-GBit CMOS NAND EPROM |
| TC58NVG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG1S3HBAI6 | 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG1S3HTA00 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG1S3HTAI0 | 2-GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG1S8BFT00 | (TC58NVG1S3BFT00) 2 GBit CMOS NAND EPROM |
| TC58NVG0S3AFT00 | 1 GBit CMOS NAND EPROM |
| TC58NVG0S3AFT05 | 1 GBit CMOS NAND EPROM |
