Description
The TC58NVG1S3HBAI6 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks.
Features
- Organization
x8
Memory cell array 2176 128K 8
Register
2176 8
Page size
2176 bytes
Block size
(128K 8K) bytes.
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
- Mode control Serial input/output Command control.
- Number of valid blocks Min 2008 blocks Max 2048 blocks.
- Power supply VCC 2.7V to 3.6V.
- Access time Cell array to register 25 s max.
TC58NVG1S3HBAI6 Datasheet
