Datasheet4U Logo Datasheet4U.com
Toshiba logo

TC58NVG1S3HBAI4 Datasheet

Manufacturer: Toshiba
TC58NVG1S3HBAI4 datasheet preview

Datasheet Details

Part number TC58NVG1S3HBAI4
Datasheet TC58NVG1S3HBAI4-Toshiba.pdf
File Size 709.59 KB
Manufacturer Toshiba
Description 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58NVG1S3HBAI4 page 2 TC58NVG1S3HBAI4 page 3

TC58NVG1S3HBAI4 Overview

The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes  8 Kbytes: The TC58NVG1S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG1S3HBAI4 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
  • Mode control Serial input/output
  • Number of valid blocks Min 2008 blocks Max 2048 blocks
  • Power supply VCC  2.7V to 3.6V
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (25 ns cycle)
  • Package P-TFBGA63-0911-0.80CZ (Weight: 0.15 g typ.)
  • 8 bit ECC for each 512Byte is required
Toshiba logo - Manufacturer

More Datasheets from Toshiba

See all Toshiba datasheets

Part Number Description
TC58NVG1S3HBAI6 2G-BIT (256M x 8 BIT) CMOS NAND E2PROM
TC58NVG1S3HTA00 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58NVG1S3HTAI0 2-GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58NVG1S3BFT00 2-GBit CMOS NAND EPROM
TC58NVG1S3EBAI4 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
TC58NVG1S3ETA00 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58NVG1S3ETAI0 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
TC58NVG1S8BFT00 (TC58NVG1S3BFT00) 2 GBit CMOS NAND EPROM
TC58NVG0S3AFT00 1 GBit CMOS NAND EPROM
TC58NVG0S3AFT05 1 GBit CMOS NAND EPROM

TC58NVG1S3HBAI4 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts