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TC58NVG1S3HTAI0 Datasheet

Manufacturer: Toshiba
TC58NVG1S3HTAI0 datasheet preview

Datasheet Details

Part number TC58NVG1S3HTAI0
Datasheet TC58NVG1S3HTAI0-Toshiba.pdf
File Size 1.23 MB
Manufacturer Toshiba
Description 2-GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58NVG1S3HTAI0 page 2 TC58NVG1S3HTAI0 page 3

TC58NVG1S3HTAI0 Overview

The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes  8 Kbytes: The TC58NVG1S3HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG1S3HTAI0 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
  • Mode control Serial input/output
  • Number of valid blocks Min 2008 blocks Max 2048 blocks
  • Power supply VCC  2.7V to 3.6V
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (25 ns cycle)
  • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
  • 8 bit ECC for each 512Byte is required
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