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TC58NVG1S3ETA00 Datasheet

Manufacturer: Toshiba
TC58NVG1S3ETA00 datasheet preview

Datasheet Details

Part number TC58NVG1S3ETA00
Datasheet TC58NVG1S3ETA00_Toshiba.pdf
File Size 550.27 KB
Manufacturer Toshiba
Description 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58NVG1S3ETA00 page 2 TC58NVG1S3ETA00 page 3

TC58NVG1S3ETA00 Overview

The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58NVG1S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58NVG1S3ETA00 Key Features

  • Organization Memory cell array Register Page size Block size
  • Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
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