Datasheet Details
| Part number | TC58NYG0S3EBAI4 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 477.07 KB |
| Description | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| Datasheet | TC58NYG0S3EBAI4-Toshiba.pdf |
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Overview: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND.
| Part number | TC58NYG0S3EBAI4 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 477.07 KB |
| Description | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| Datasheet | TC58NYG0S3EBAI4-Toshiba.pdf |
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The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
| Part Number | Description |
|---|---|
| TC58NYG0S3HBAI4 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG1S3HBAI6 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
| TC58NYG2S0FBAI4 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| TC58NYG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG2S0HBAI6 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG2S3ETA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NS100DC | 1 GBit CMOS NAND EPROM |
| TC58NS128BDC | 128 MBit CMOS NAND EPROM |
| TC58NS256BDC | 256 MBit CMOS NAND EPROM |