Datasheet Summary
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NYG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data...