| Part number | TC58NYG0S3EBAI4 |
|---|---|
| Download | TC58NYG0S3EBAI4 Datasheet (PDF) |
| File Size | 477.07 KB |
| Manufacturer | Toshiba |
| Description | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
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| Part Number | Description |
|---|---|
| TC58NYG0S3HBAI4 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG1S3HBAI6 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
| TC58NYG2S0FBAI4 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| TC58NYG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58NYG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
