Datasheet4U Logo Datasheet4U.com

TC58NYG2S0HBAI4 Datasheet 4 Gbit (512m X 8 Bit) CMOS Nand E2prom

Manufacturer: Toshiba

Overview: TC58NYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND.

General Description

The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.

The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).

Key Features

  • Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 2008 blocks Max 2048 blocks.
  • Power supply VCC = 1.7V to 1.95V.
  • Access time Cell array to.

More Datasheets from Toshiba

Part Number Description
TC58NYG2S0HBAI6 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NYG2S0FBAI4 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
TC58NYG2S3ETA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NYG0S3EBAI4 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NYG0S3HBAI4 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NYG1S3HBAI4 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
TC58NYG1S3HBAI6 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
TC58NS100DC 1 GBit CMOS NAND EPROM
TC58NS128BDC 128 MBit CMOS NAND EPROM
TC58NS256BDC 256 MBit CMOS NAND EPROM

TC58NYG2S0HBAI4 Distributor