TC58NYG2S0HBAI4 - 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Product Overview

Toshiba

Datasheet Details

Part number	TC58NYG2S0HBAI4
Manufacturer	Toshiba
File Size	478.60 KB
Description	4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58NYG2S0HBAI4 Datasheet
Additional preview pages of the TC58NYG2S0HBAI4 datasheet.

Product details

Description

The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.

Features

Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 2008 blocks Max 2048 blocks.
Power supply VCC = 1.7V to 1.95V.
Access time Cell array to.

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Published: Oct 19, 2015 |