TC58NYG2S3ETA00 Overview
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58NYG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.
TC58NYG2S3ETA00 Key Features
- Organization
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, M
- Mode control Serial input/output
- Number of valid blocks Min 4016 blocks Max 4096 blocks
- Power supply VCC = 1.7V to 1.95V
- Access time
- Program/Erase time Auto Page Program Auto Block Erase
- Operating current Read (25 ns cycle) Program (avg.)
- Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)