Description
The TC58NYG0S3HBAI4 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks.
Features
- Organization
Memory cell array Register Page size Block size
x8 2176 64K 8 2176 8 2176 bytes (128K 8K) bytes.
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy.
- Mode control Serial input/output
Command control.
- Number of valid blocks Min 1004 blocks
Max 1024 blocks.
- Power supply VCC 1.7V to 1.95V.
- Access time
Cell array to register 25 s max
Serial Read Cycle
25 ns min (CL=30pF).
- Program/Erase time Auto Page Pro.
TC58NYG0S3HBAI4 Datasheet
