TC58NYG0S3HBAI4 Datasheet | Toshiba

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG0S3HBAI4 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes  8 Kbytes: 2176 bytes  64 pages). The TC58NYG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data...