TC58NYG0S3HBAI4 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

Product Overview

Toshiba

Datasheet Details

Part number	TC58NYG0S3HBAI4
Manufacturer	Toshiba
File Size	583.21 KB
Description	1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58NYG0S3HBAI4 Datasheet
Additional preview pages of the TC58NYG0S3HBAI4 datasheet.

Product details

Description

The TC58NYG0S3HBAI4 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.

Features

Organization Memory cell array Register Page size Block size x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy.
Mode control Serial input/output Command control.
Number of valid blocks Min 1004 blocks Max 1024 blocks.
Power supply VCC  1.7V to 1.95V.
Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=30pF).
Program/Erase time Auto Page Pro.

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Published: Oct 19, 2015 |