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TC58NYG2S0FBAI4 - 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM

General Description

The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.

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Datasheet Details

Part number TC58NYG2S0FBAI4
Manufacturer Toshiba
File Size 667.38 KB
Description 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
Datasheet download datasheet TC58NYG2S0FBAI4 Datasheet

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Full PDF Text Transcription (Reference)

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TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks. The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes  14 Kbytes: 4320 bytes  64 pages). The TC58NYG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.