TC58NYG2S0FBAI4 Datasheet | Toshiba

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks. The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes  14 Kbytes: 4320 bytes  64 pages). The TC58NYG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data...