The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MICROWAVE POWER GaN HEMT
TGI7179-60LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 48dBm at Pin= 40.5dBm ŋHIGH GAIN
GL= 12.0dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 41dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 40V IDSset= 0.4A f = 7.1 to 7.9GHz @Pin= 40.5dBm
dBm 47.0 48.0
A
3.5
4.5
%
37
Linear Gain Gain flatness
GL @Pin= 20dBm
G
dB
11.0 12.0
dB
0.
TGI7179-60LHA Datasheet
