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MICROWAVE POWER GaN HEMT
TGI7785-120L
FEATURES
･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER
Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN
GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level
･HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power
Drain Current Power Added Efficiency
SYMBOL
CONDITIONS
Pout IDS1 add
VDS= 24V IDSset= 4.0A f = 7.7 to 8.5GHz @Pin= 44dBm
Linear Gain
GL
@Pin= 20dBm
Gain flatness 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
G IM3 IDS2 Tch
Two-Tone Test Po= 44.0dBm, f= 5MHz (Single Carrier Level)
(VDS X IDS + Pin – Pout) X Rth(c-c)
Recommended Gate Resistance(Rg): 28
UNIT dBm
A % dB dB dBc A °C
MIN. 50.
TGI7785-120L Datasheet
