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TGI0910-50 - MICROWAVE POWER GaN HEMT

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  • ŋBROAD BAND.

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Datasheet Details

Part number TGI0910-50
Manufacturer Toshiba
File Size 295.60 KB
Description MICROWAVE POWER GaN HEMT
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MICROWAVE POWER GaN HEMT TGI0910-50 FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power Drain Current Power Added Efficiency Pout IDS add VDS= 24V IDSset= 1.5A f= 9.5 to 10.5 GHz @Pin= 41.0dBm dBm 46.0 47.0  A  5.0 6.0 %  31  Linear Gain Channel Temperature Rise GL Tch @Pin= 20dBm dB (VDS  IDS  Pin  Pout)  Rth(c-c) °C 7.0 9.0   130 150 Recommended Gate Resistance(Rg): 13.3  ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 5V IDS= 5.
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