TGI5059-120L Datasheet | Toshiba

MICROWAVE POWER GaN HEMT Features ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 42.0dBm ･HIGH GAIN GL= 13.5dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 4.0A f = 5.0 to 5.9GHz @Pin= 42dBm dBm A % Linear Gain Gain flatness GL dB @Pin= 20dBm G dB 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two-Tone Test dBc @Po=44.0dBm, f= 5MHz (Single Carrier Level) Channel...