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MICROWAVE POWER GaN HEMT
TGI5867-130LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN
GL= 12.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 40V IDSset= 0.8A f = 5.85 to 6.75GHz @Pin= 43dBm
dBm 50.0 51.0
A
7.0
9.0
%
38
Linear Gain Gain flatness
GL @Pin= 20dBm
G
dB
11.5 12.5
dB
0.
TGI5867-130LHA Datasheet
