TGI5867-130LHA - MICROWAVE POWER GaN HEMT

Datasheet Summary

Features

ŋBROAD BAND.

Toshiba

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Datasheet Details

Part number	TGI5867-130LHA
Manufacturer	Toshiba
File Size	337.08 KB
Description	MICROWAVE POWER GaN HEMT
Datasheet	TGI5867-130LHA Datasheet
Additional preview pages of the TGI5867-130LHA datasheet.

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MICROWAVE POWER GaN HEMT TGI5867-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 12.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 40V IDSset= 0.8A f = 5.85 to 6.75GHz @Pin= 43dBm dBm 50.0 51.0  A  7.0 9.0 %  38  Linear Gain Gain flatness GL @Pin= 20dBm G dB 11.5 12.5  dB   0.

Published: Jun 20, 2020 |