TGI5964-120L - MICROWAVE POWER GaN HEMT

Datasheet Summary

Features

ŋBROAD BAND.

Toshiba

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Datasheet Details

Part number	TGI5964-120L
Manufacturer	Toshiba
File Size	377.41 KB
Description	MICROWAVE POWER GaN HEMT
Datasheet	TGI5964-120L Datasheet
Additional preview pages of the TGI5964-120L datasheet.

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MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 4.0A f= 5.9 to 6.4GHz @Pin= 43dBm dBm A % 50.0   51.0 10.0 44  12.

Published: Jun 20, 2020 |