TGI5964-120L
TGI5964-120L is MICROWAVE POWER GaN HEMT manufactured by Toshiba.
MICROWAVE POWER GaN HEMT
Features
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN
GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 24V IDSset= 4.0A f= 5.9 to 6.4GHz @Pin= 43dBm dBm A %
50.0
51.0 10.0 44
12.0
Linear Gain
Gain flatness 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
GL G IM3 IDS2 Tch dB @Pin= 20dBm dB
Two-Tone Test...
