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MICROWAVE POWER GaN HEMT
TGI5867-60LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 48.0dBm at Pin= 40dBm ŋHIGH GAIN
GL= 12.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 41dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 40V IDSset= 0.4A f= 5.85 to 6.75GHz @Pin= 40dBm
dBm 47.0 48.0
A
3.5
4.5
%
38
Linear Gain Gain flatness
GL @Pin= 20dBm
G
dB
11.5 12.5
dB
0.
TGI5867-60LHA Datasheet
