TGI5867-50L Datasheet | Toshiba

MICROWAVE POWER GaN HEMT Features ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3(Min.)= -40dBc at Po=32.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 3.0A f= 5.85 to 6.75GHz @Pin= 39dBm Linear Gain @Pin= 20dBm Gain flatness G 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two-Tone Test Po= 32.0dBm, ∆f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS...