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MICROWAVE POWER GaN HEMT
TGI5867-50L
FEATURES
･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER
Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN
GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION
IM3(Min.)= -40dBc at Po=32.0dBm Single Carrier Level
･HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 24V IDSset= 3.0A f= 5.85 to 6.75GHz @Pin= 39dBm
Linear Gain
GL
@Pin= 20dBm
Gain flatness
G
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two-Tone Test
Po= 32.0dBm, ∆f= 5MHz (Single Carrier Level)
Channel Temperature Rise
Tch
(VDS X IDS + Pin – Pout) X Rth(c-c)
Recommended Gate Resistance(Rg): 60
UNIT dBm
A % dB dB dBc A °C
MIN.
TGI5867-50L Datasheet
