TGI5867-25L - MICROWAVE POWER GaN HEMT

Datasheet Summary

Features

ŋBROAD BAND.

Toshiba

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Datasheet Details

Part number	TGI5867-25L
Manufacturer	Toshiba
File Size	320.19 KB
Description	MICROWAVE POWER GaN HEMT
Datasheet	TGI5867-25L Datasheet
Additional preview pages of the TGI5867-25L datasheet.

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MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 44.5dBm at Pin= 35dBm ŋHIGH GAIN GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -40dBc(Min.) at Pout= 29dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 1.75A f= 5.85 to 6.75 GHz @Pin= 35dBm dBm 44.0 44.5  A  2.7 3.

Published: Jun 20, 2020 |