The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MICROWAVE POWER GaN HEMT
TGI5867-25L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 44.5dBm at Pin= 35dBm ŋHIGH GAIN
GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -40dBc(Min.) at Pout= 29dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 24V IDSset= 1.75A f= 5.85 to 6.75 GHz @Pin= 35dBm
dBm 44.0 44.5
A
2.7
3.
TGI5867-25L Datasheet
