TGI1314-50LA Datasheet | Toshiba

MICROWAVE POWER GaN HEMT Features ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 42.0dBm ･HIGH GAIN GL= 8.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 40.0dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS Output Power Drain Current Power Added Efficiency Pout IDS1 PAE VDS= 24V IDSset= 2.0A f = 13.75 to 14.5GHz @Pin= 42dBm Linear Gain Gain Flatness @Pin= 20dBm G 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IM3 IM3-2 IDS2 Tch Two-tone Test Po= 40.0dBm (Single Carrier Level) f= 5MHz...