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TGI1314-50LA - MICROWAVE POWER GaN HEMT

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Features

  • ･BROAD BAND.

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Datasheet Details

Part number TGI1314-50LA
Manufacturer Toshiba
File Size 334.36 KB
Description MICROWAVE POWER GaN HEMT
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MICROWAVE POWER GaN HEMT TGI1314-50LA FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 42.0dBm ･HIGH GAIN GL= 8.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 40.0dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS Output Power Drain Current Power Added Efficiency Pout IDS1 PAE VDS= 24V IDSset= 2.0A f = 13.75 to 14.5GHz @Pin= 42dBm Linear Gain Gain Flatness GL @Pin= 20dBm G 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IM3 IM3-2 IDS2 Tch Two-tone Test Po= 40.0dBm (Single Carrier Level) f= 5MHz (IM3) f= 150MHz (IM3-2) (VDS X IDS + Pin – Pout) X Rth(c-c) Recommended Gate Resistance(Rg): 13.
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