The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MICROWAVE POWER GaN HEMT
TGI7785-130LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 51.0dBm at Pin= 44dBm ŋHIGH GAIN
GL= 11.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 40V IDSset= 0.8A f= 7.7 to 8.5GHz @Pin= 44dBm
dBm 50.0 51.0
A
7.0
9.0
%
36
Linear Gain Gain flatness
GL @Pin= 20dBm
G
dB
10.5 11.5
dB
±0.
TGI7785-130LHA Datasheet
