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MICROWAVE POWER GaN HEMT
TGI7785-60LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 48.0dBm at Pin= 41dBm ŋHIGH GAIN
GL= 11.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 29dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 40V IDSset= 0.4A f= 7.7 to 8.5GHz @Pin= 41dBm
dBm 47.0 48.0
A
4.0
4.5
%
32
Linear Gain Gain flatness
GL @Pin= 20dBm
G
dB
10.5 11.5
dB
0.
TGI7785-60LHA Datasheet
