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TIM1314-15UL - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ŋBROAD BAND.

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Datasheet preview – TIM1314-15UL

Datasheet Details

Part number TIM1314-15UL
Manufacturer Toshiba
File Size 321.67 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM1314-15UL Datasheet
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Full PDF Text Transcription

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MICROWAVE POWER GaAs FET TIM1314-15UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -42dBc(Min.) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 4.0A f= 13.75 to 14.
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