TIM1314-15UL Datasheet | Toshiba

MICROWAVE POWER Ga As FET Features ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1d B= 42.0d Bm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1d B= 7.0d B at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -42d Bc(Min.) at Pout= 30d Bm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1d B G1d B IDS1 G VDS= 10V IDSset= 4.0A f= 13.75 to 14.5GHz UNIT d Bm d B A d B Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 30d Bm, f= 5MHz d Bc (Single Carrier Level) (VDS  IDS  Pin - P1d B)  Rth(c-c) °C Remended Gate Resistance(Rg): 100  MIN. 41.0 6.0    -42 ...