TIM1314-9L Datasheet | Toshiba

MICROWAVE POWER Ga As FET Features ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1d B= 39.5d Bm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1d B= 6.0d B at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25d Bc(Min.) at Pout= 33d Bm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1d B G1d B IDS1 G VDS= 9V IDSset= 2.2A f= 13.75 to 14.5GHz UNIT d Bm d B A d B Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 33d Bm, f= 5MHz d Bc (Single Carrier Level) (VDS  IDS  Pin - P1d B)  Rth(c-c) °C Remended Gate Resistance(Rg): 150  MIN. 39.0 5.0    -25 ...