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TIM1314-9L - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ŋBROAD BAND.

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Datasheet Details

Part number TIM1314-9L
Manufacturer Toshiba
File Size 395.46 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM1314-9L Datasheet
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Full PDF Text Transcription

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MICROWAVE POWER GaAs FET TIM1314-9L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 39.5dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 2.2A f= 13.75 to 14.
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