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TIM1314-8UL - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM1314-8UL
Manufacturer Toshiba
File Size 477.50 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM1314-8UL Datasheet
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Full PDF Text Transcription

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 13.75GHz to 14.5GHz ･HIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1314-8UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 2.0A f = 13.75 to 14.5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 27.
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