The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MICROWAVE POWER GaAs FET
TIM1314-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN
G1dB= 5.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 7.0A f= 13.75 to 14.
TIM1314-30L Datasheet
