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MOSFETs Silicon N-channel MOS (U-MOS-H)
TK160F10N1
1. Applications
• Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.0 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK160F10N1
TO-220SM(W)
1: Gate 2: Drain (Heatsink) 3: Source
©2015-2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-08
2020-06-24 Rev.9.0
TK160F10N1
4.
TK160F10N1 Datasheet
