TK160F10N1 - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TK160F10N1
Manufacturer	Toshiba
File Size	391.86 KB
Description	Silicon N-channel MOSFET
Datasheet	TK160F10N1 Datasheet
Additional preview pages of the TK160F10N1 datasheet.

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.0 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK160F10N1 TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-08 2020-06-24 Rev.9.0 TK160F10N1 4. Absolute Maximum Ratings (Note) (Ta = 25  u.

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Published: Jun 20, 2019 |