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TK165U65Z5 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) Fast reverse recovery time: trr = 100 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.127 Ω (typ. ) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.73 mA) 3. Packaging and Internal Circuit TK165U65Z5 TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. 4. Ab.

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Datasheet Details

Part number TK165U65Z5
Manufacturer Toshiba
File Size 506.32 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (DTMOS�) TK165U65Z5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.127 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.73 mA) 3. Packaging and Internal Circuit TK165U65Z5 TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. 4.
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